FSYE23A0D1 8 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
From International Rectifier
| Status | DISCONTINUED |
| Case Connection | DRAIN |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 200 V |
| Drain Current-Max (ID) | 8 A |
| Drain-source On Resistance-Max | 0.3300 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | SMD0.5, 3 PIN |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Pulsed Drain Current-Max (IDM) | 24 A |
| Surface Mount | Yes |
| Terminal Finish | TIN LEAD |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
