IRC530A
N-Channel Enhanc MOSFET w- Current Sensing

From International Rectifier

@(VDS) (V) (Test Condition)20
@I(D) (A) (Test Condition)7.0
Absolute Max. Power Diss. (W)75
C(iss) Max. (F)960p
I(D) Abs. Drain Current (A)14
I(DSS) Min. (A)250u
I(GSS) Max. (A)500n
PackageTO-220(5)
V(BR)DSS (V)100
V(BR)GSS (V)20
g(fs) Min. (S) Trans. conduct.3.9
r(DS)on Max. (Ohms)180m

External links