IRC530A N-Channel Enhanc MOSFET w- Current Sensing
From International Rectifier
@(VDS) (V) (Test Condition) | 20 |
@I(D) (A) (Test Condition) | 7.0 |
Absolute Max. Power Diss. (W) | 75 |
C(iss) Max. (F) | 960p |
I(D) Abs. Drain Current (A) | 14 |
I(DSS) Min. (A) | 250u |
I(GSS) Max. (A) | 500n |
Package | TO-220(5) |
V(BR)DSS (V) | 100 |
V(BR)GSS (V) | 20 |
g(fs) Min. (S) Trans. conduct. | 3.9 |
r(DS)on Max. (Ohms) | 180m |