IRF200B211
MOSFET N-CH 200V 12A TO-220AB

From International Rectifier

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C12A (Tc)
DatasheetsIRF200B211
Drain to Source Voltage (Vdss)200V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs23nC @ 10V
Input Capacitance (Ciss) @ Vds790pF @ 50V
Mounting TypeThrough Hole
PCN PackagingPackage Drawing Update 19/Aug/2015
Package / CaseTO-220-3
PackagingTube
Power - Max80W
Rds On (Max) @ Id, Vgs170 mOhm @ 7.2A, 10V
SeriesHEXFET®, StrongIRFET™
Standard Package50
Supplier Device PackageTO-220AB
Vgs(th) (Max) @ Id4.9V @ 50µA

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