IRF240EAPBF
18 A, 200 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)450 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)18 A
Drain-source On Resistance-Max0.2100 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)72 A
Terminal FinishNOT SPECIFIED
Terminal FormPIN/PEG
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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