IRF420
2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

From International Rectifier

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)2.5 A
Drain-source On Resistance-Max3 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)8 A
Terminal FinishTIN LEAD
Terminal FormPIN/PEG
Terminal PositionBOTTOM
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links