IRF540NS
33 A, 100 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSFET

From International Rectifier

StatusEOL/LIFEBUY
Avalanche Energy Rating (Eas)185 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)33 A
Drain-source On Resistance-Max0.0440 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionPLASTIC, D2PAK-3
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max3.8 W
Pulsed Drain Current-Max (IDM)110 A
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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