IRF6100TR
5100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

From International Rectifier

StatusDISCONTINUED
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min20 V
Drain Current-Max (ID)5.1 A
Drain-source On Resistance-Max0.0650 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionFLIPFET, ISOMETRIC-4
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeSQUARE
Package StyleGRID ARRAY
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormBALL
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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