IRF623
4.3 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

From International Rectifier

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min150 V
Drain Current-Max (ID)4.3 A
Drain-source On Resistance-Max1.2 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)17 A
Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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