IRF630NL
MOSFET N-CH 200V 9.3A TO-262

From International Rectifier

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C9.3A (Tc)
DatasheetsIRF630N(S,L)
Drain to Source Voltage (Vdss)200V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs35nC @ 10V
Input Capacitance (Ciss) @ Vds575pF @ 25V
Mounting TypeThrough Hole
Other Names*IRF630NL
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
PackagingTube
Power - Max82W
Rds On (Max) @ Id, Vgs300 mOhm @ 5.4A, 10V
SeriesHEXFET®
Standard Package50
Supplier Device PackageTO-262
Vgs(th) (Max) @ Id4V @ 250µA

External links