IRF630NSTRRPBF MOSFET N-CH 200V 9.3A D2PAK
From International Rectifier
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Datasheets | IRF630N |
| Drain to Source Voltage (Vdss) | 200V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 575pF @ 25V |
| Mounting Type | Surface Mount |
| PCN Assembly/Origin | Alternate Assembly Site 11/Nov/2013 |
| PCN Packaging | Package Drawing Update 19/Aug/2015 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Packaging | Tape & Reel (TR) |
| Power - Max | 82W |
| Product Photos | TO-263 |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 5.4A, 10V |
| Series | HEXFET® |
| Standard Package | 800 |
| Supplier Device Package | D2PAK |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
