IRF7101 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From International Rectifier
Status | EOL/LIFEBUY |
Channel Type | N-CHANNEL |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 20 V |
Drain Current-Max (ID) | 3.5 A |
Drain-source On Resistance-Max | 0.1000 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Number of Elements | 2 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 1.4 W |
Surface Mount | Yes |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |