IRF7333
3.5 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From International Rectifier

Status DISCONTINUED
Avalanche Energy Rating (Eas) 112 mJ
Channel Type N-CHANNEL
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Drain Current-Max (ID) 3.5 A
Drain-source On Resistance-Max 0.1000 ohm
DS Breakdown Voltage-Min 30 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Mfr Package Description SO-8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Pulsed Drain Current-Max (IDM) 20 A
Surface Mount Yes
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transistor Type GENERAL PURPOSE POWER

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