IRF7342QPBF
3.4 A, 55 V, 0.105 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)114 mJ
Channel TypeP-CHANNEL
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min55 V
Drain Current-Max (ID)3.4 A
Drain-source On Resistance-Max0.1050 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionLEAD FREE, SOP-8
Number of Elements2
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)27 A
Surface MountYes
Terminal FinishMATTE TIN OVER NICKEL
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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