IRF7342TR 3.4 A, 55 V, 0.105 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
From International Rectifier
| Status | DISCONTINUED |
| Avalanche Energy Rating (Eas) | 114 mJ |
| Channel Type | P-CHANNEL |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 55 V |
| Drain Current-Max (ID) | 3.4 A |
| Drain-source On Resistance-Max | 0.1050 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 2 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Pulsed Drain Current-Max (IDM) | 27 A |
| Surface Mount | Yes |
| Terminal Finish | TIN LEAD |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
