IRF7416GPBF
10 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)370 mJ
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)10 A
Drain-source On Resistance-Max0.0200 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionHALOGEN AND LEAD FREE, SOP-8
Number of Elements1
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max2.5 W
Pulsed Drain Current-Max (IDM)45 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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