IRF7603 5.6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
From International Rectifier
Status | DISCONTINUED |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 5.6 A |
Drain-source On Resistance-Max | 0.0350 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | MICRO-8 |
Number of Elements | 1 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 1.8 W |
Pulsed Drain Current-Max (IDM) | 30 A |
Surface Mount | Yes |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |