IRFP064N-205
110 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET

From International Rectifier

StatusDISCONTINUED
Avalanche Energy Rating (Eas)480 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min55 V
Drain Current-Max (ID)110 A
Drain-source On Resistance-Max0.0080 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)390 A
Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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