JANSF2N7433
35 A, 200 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)500 mJ
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)35 A
Drain-source On Resistance-Max0.0770 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHERMETICALLY SEALED, CERAMIC PACKAGE-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeSQUARE
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)140 A
Terminal FinishTIN LEAD
Terminal FormPIN/PEG
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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