JANSH2N7432 35 A, 100 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
From International Rectifier
| Status | ACTIVE |
| Avalanche Energy Rating (Eas) | 500 mJ |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 35 A |
| Drain-source On Resistance-Max | 0.0450 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | METAL |
| Package Shape | SQUARE |
| Package Style | FLANGE MOUNT |
| Pulsed Drain Current-Max (IDM) | 201 A |
| Terminal Finish | TIN LEAD |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
