JANSH2N7433U
43 A, 200 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)500 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)43 A
Drain-source On Resistance-Max0.0770 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionSMD2, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleCHIP CARRIER
Pulsed Drain Current-Max (IDM)172 A
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormNO LEAD
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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