JANTX2N7219U
18 A, 200 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)450 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)18 A
Drain-source On Resistance-Max0.2500 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHERMETIC SEALED, SMD1, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleCHIP CARRIER
Pulsed Drain Current-Max (IDM)72 A
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormNO LEAD
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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