JANTXV2N6782 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
From International Rectifier
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 68 mJ |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 3.5 A |
Drain-source On Resistance-Max | 0.6900 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | HERMETIC SEALED, TO-39, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | METAL |
Package Shape | ROUND |
Package Style | CYLINDRICAL |
Pulsed Drain Current-Max (IDM) | 14 A |
Terminal Finish | TIN LEAD |
Terminal Form | WIRE |
Terminal Position | BOTTOM |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |