JANTXV2N6796
8 A, 100 V, 0.195 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)4.3 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)8 A
Drain-source On Resistance-Max0.1950 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHERMETIC SEALED, TO-205AF, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleCYLINDRICAL
Pulsed Drain Current-Max (IDM)32 A
Terminal FinishTIN LEAD
Terminal FormWIRE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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