IRFP064N-206 110 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
From International Rectifier
Status | DISCONTINUED |
Avalanche Energy Rating (Eas) | 480 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 55 V |
Drain Current-Max (ID) | 110 A |
Drain-source On Resistance-Max | 0.0080 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Pulsed Drain Current-Max (IDM) | 390 A |
Terminal Finish | TIN LEAD |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |