IS61VPD25636A-250B2I
256K X 36 CACHE SRAM, 2.6 ns, PBGA119

From Integrated Silicon Solution, Inc.

StatusACTIVE
Access Time-Max (tACC)2.6 ns
Memory Density9.44E6 deg
Memory IC TypeCACHE SRAM
Memory Width36
Mfr Package Description14 X 22 MM, 1MM PITCH, PLASTIC, BGA-119
Number of Functions1
Number of Terminals119
Number of Words262144 words
Number of Words Code256K
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min-40 Cel
Organization256K X 36
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY
Parallel/SerialPARALLEL
Supply Voltage-Max (Vsup)2.62 V
Supply Voltage-Min (Vsup)2.38 V
Supply Voltage-Nom (Vsup)2.5 V
Surface MountYes
TechnologyCMOS
Temperature GradeINDUSTRIAL
Terminal FinishTIN LEAD
Terminal FormBALL
Terminal Pitch1.27 mm
Terminal PositionBOTTOM

External links