U757C-200M3I 1M X 36 DDR SRAM, 0.45 ns, PBGA165
From Integrated Silicon Solution, Inc.
| Status | ACTIVE |
| Access Time-Max (tACC) | 0.4500 ns |
| Memory Density | 3.77E7 deg |
| Memory IC Type | DDR SRAM |
| Memory Width | 36 |
| Mfr Package Description | 15 X 17 MM, 1 MM PITCH, FBGA-165 |
| Number of Functions | 1 |
| Number of Terminals | 165 |
| Number of Words | 1.05E6 words |
| Number of Words Code | 1M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 1M X 36 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, LOW PROFILE |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 1.89 V |
| Supply Voltage-Min (Vsup) | 1.71 V |
| Supply Voltage-Nom (Vsup) | 1.8 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | TIN LEAD |
| Terminal Form | BALL |
| Terminal Pitch | 1 mm |
| Terminal Position | BOTTOM |
