Microchip.com/JAN1N5811
1052 Bytes - 19:21:41, 03 May 2024
Microsemi.com/JAN1N5811
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 150V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"Military, MIL-PRF-19500\/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"*","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,9,11","Current - Average Rectified (Io)":"6A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b0C","Package ...
1531 Bytes - 19:21:41, 03 May 2024
Microsemi.com/JAN1N5811CBUS
{"Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"125(A)","Rectifier Type":"Switching Diode","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Forward Current":"6000(mA)","Rad Hardened":"No","Forward Voltage":"0.875(V)","Peak Reverse Current":"5(uA)","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"30(ns)","Package Type":"E-MELF","Maximum Forward Current":"6000(mA)","Rev Curr":"5(uA)","Peak Forward Voltage":"0.875(V)",...
1555 Bytes - 19:21:41, 03 May 2024
Microsemi.com/JAN1N5811R
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Terminal Form":"WIRE","Package Style":"LONG FORM","Number of Phases":"1","Diode Element Material":"SILICON","Application":"FAST RECOVERY","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.0300 us","Number of El...
1189 Bytes - 19:21:41, 03 May 2024
Microsemi.com/JAN1N5811URS
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 150V","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Family":"Diodes, Rectifiers - Single","Standard Package":"100","Series":"Military, MIL-PRF-19500\/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US\/URS","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65\u00b0C ~ 1...
1583 Bytes - 19:21:41, 03 May 2024
Microsemi.com/JAN1N5811US
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"5\u00b5A @ 150V","Product Photos":"JAN1N5811US","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"Military, MIL-PRF-19500\/477","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US\/URS","Current - Average Rectified (Io)":"6A","Operating Temperatur...
1687 Bytes - 19:21:41, 03 May 2024
Microsemi.com/JAN1N5811X
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Terminal Form":"WIRE","Package Style":"LONG FORM","Number of Phases":"1","Diode Element Material":"SILICON","Application":"FAST RECOVERY","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.0300 us","Number of El...
1189 Bytes - 19:21:41, 03 May 2024
Semtech.com/JAN1N5811
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Mfr Package Description":"G112, 2 PIN","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"150 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"SUPER FAST RECOVERY","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":...
1270 Bytes - 19:21:41, 03 May 2024