{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40mA","Noise Figure (dB Typ @ f)":"4.5dB @ 450MHz","Transistor Type":"NPN","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"15V","Supplier Device Package":"*","Packaging":"*","Datasheets":"2N2857UB","Power - Max":"200mW","Gain":"21dB","Package \/ Case":"*","Mounting Type":"*","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 3mA, 1V","Ot...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"1 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Element Material":"SILICON","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Terminal Position":"DUAL","Transist...