Microchip.com/LND150N3-G
{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Online Catalog":"N-Channel Depletion Mode FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"LND150","Rds On (Max) @ Id, Vgs":"1000 Ohm @ 500\u00b5A, 0V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"740mW","Standard Package"...
1752 Bytes - 00:29:51, 02 May 2024
Microchip.com/LND150N3-G-P002
{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"LND150","Rds On (Max) @ Id, Vgs":"1000 Ohm @ 500\u00b5A, 0V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"740mW","Standard Package":"2,000","PCN Assembly\/Origin":"Fab ...
1709 Bytes - 00:29:51, 02 May 2024
Microchip.com/LND150N3-G-P003
{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"LND150","Rds On (Max) @ Id, Vgs":"1000 Ohm @ 500\u00b5A, 0V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"740mW","Standard Package":"2,000","PCN Assembly\/Origin":"Fab ...
1709 Bytes - 00:29:51, 02 May 2024
Microchip.com/LND150N3-G P005
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"500 V","Transistor Polarity":"N-Channel","Channel Mode":"Depletion","Brand":"Microchip Technology","Id - Continuous Drain Current":"30 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1000 Ohms","Package \/ Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...
1390 Bytes - 00:29:51, 02 May 2024
Microchip.com/LND150N3-G-P013
{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"LND150","Rds On (Max) @ Id, Vgs":"1000 Ohm @ 500\u00b5A, 0V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"740mW","Standard Package":"2,000","PCN Assembly\/Origin":"Fab ...
1708 Bytes - 00:29:51, 02 May 2024
Microchip.com/LND150N3-G-P014
{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"LND150","Rds On (Max) @ Id, Vgs":"1000 Ohm @ 500\u00b5A, 0V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"740mW","Standard Package":"2,000","PCN Assembly\/Origin":"Fab ...
1709 Bytes - 00:29:51, 02 May 2024
Microchip_technology_inc_/LND150N3-G
862 Bytes - 00:29:51, 02 May 2024
Microchip_technology_inc_/LND150N3-G-P002
993 Bytes - 00:29:51, 02 May 2024
Microchip_technology_inc_/LND150N3-G-P003
991 Bytes - 00:29:51, 02 May 2024
Microchip_technology_inc_/LND150N3-G-P013
991 Bytes - 00:29:51, 02 May 2024
Microchip_technology_inc_/LND150N3-G-P014
991 Bytes - 00:29:51, 02 May 2024
Supertex.com/LND150N3-G
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.7400 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0300 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1000 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1500 Bytes - 00:29:51, 02 May 2024