{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Vgs(th) (Max) @ Id":"-","Package \/ Case":"TO-243AA","Current - Continuous Drain (Id) @ 25\u00b0C":"30mA (Tj)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"C04-029 MB","PCN Assembly\/Origin":"Fab Site Addition 14\/Aug\/2014 Die Material\/Assembly Site 29\/Jul\/2015","Rds On (Max) @ Id, Vgs":"1000 Ohm @ 500\u00b5A, 0V","Datasheets":"LND150","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage...

{"Category":"MOSFET","Maximum Drain Source Voltage":"500 V","Typical Rise Time":"450 ns","Typical Turn-Off Delay Time":"100 ns","Description":"Value","Maximum Continuous Drain Current":"0.03 A","Package":"4SOT-89","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"90 ns","Channel Mode":"Depletion","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1000000@0V mOhm","Manufacturer":"Microchip","Typical Fall Time":"1300 ns"}...

{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0300 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1000 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Tra...