{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"10A","PCN Design\/Specification":"Lead Frame Dimensions 29\/Nov\/2007","Package \/ Case":"TO-220-3","DC Current Gain (hFE) (Min) @ Ic, Vce":"20 @ 4A, 4V","Frequency - Transition":"2MHz","Voltage - Collector Emitter Breakdown (Max)":"60V","Datasheets":"MJE3055T TO220B03 Pkg Drawing","Standard Package":"50","Transistor Type":"NPN","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"8V @ 3.3A, 10A","PCN Packaging...

{"Collector Current (DC) ":"10(A)","Transistor Polarity":"NPN","Power Dissipation":"0.6(W)","Category ":"Bipolar Power","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Packaging":"Rail\/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Frequency":"2(MHz)","Package Type":"TO-220","Collector-Base Voltage":"70(V)","DC Current Gain":"20","Mounting":"Through Hole","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3 +Tab","Number of Elements":"...