{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT23","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"40pF @ 10V","Series":"-","Standard Package":"1","Supplier Device Package":"SOT-23-3","Datasheets":"MMBF170","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"300mW","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Mounting Type":"Surface ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Catalog Drawings":"SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT23","PCN Assembly\/Origin":"Plating Site Addition 29\/Jul\/2015","PCN Design\/Specification":"Green Encapsulate 15\/May\/2008 Bond Wire 3\/May\/2011","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","Datasheets":"MMBF170","FE...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Description":"Value","Maximum Continuous Drain Current":"0.5 A","Package":"3SOT-23","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"5000@10V mOhm","Manufacturer":"Diodes, Inc"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.5(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"0.3(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surface Mo...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Tr...

{"Polarity":"N","Continuous Drain Current":"0.5(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Small Signal","Gate-Source Voltage (Max)":"'\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-23","Drain-Source On-Res":"5(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"3","Channel Mode":"Enhancement","Dra...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 1mA","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"500mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23-3","PCN Assembly\/Origin":"SOT23 Manufacturing Source 31\/May2013","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","Datasheets":"BS170, MMBF170 Molded Pkg, SUPERSOT, 3 Lead Drawing","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Binary Yea...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V",...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHIN...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.3(W)","Continuous Drain Current":"0.5(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 1mA","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"500mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23-3","PCN Design\/Specification":"Copper Wire 26\/May\/2009","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","Datasheets":"MMBF170LT1","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"10","Drain to Source Voltage (Vdss)":"60V","PCN Obsolesc...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 1mA","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"500mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23-3","PCN Assembly\/Origin":"TMOS7 Wafer Fab Expansion 04\/Dec\/2013","PCN Design\/Specification":"Copper Wire 26\/May\/2009","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","Datasheets":"MMBF170LT1","FET Type":"MOSFET N-Channel, Metal Oxide","Standard P...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"SOT-23-3","Vgs(th) (Max) @ Id":"3V @ 1mA","Series":"-","Standard Package":"10,000","PCN Design\/Specification":"Copper Wire 26\/May\/2009","Supplier Device Package":"SOT-23-3 (TO-236)","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"MMBF170LT1","Power - Max":"225mW","Package \/ Case":"TO-236-3, SC-59, SOT-23-3"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 1mA","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"500mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23-3","PCN Design\/Specification":"Copper Wire 26\/May\/2009","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","Datasheets":"MMBF170LT1","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"10,000","Drain to Source Voltage (Vdss)":"60V","PCN Obso...