{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"NPN","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.2000 A","Collector-emitter Voltage-Max":"160 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RE...

{"Terminal Finish":"MATTE TIN","Transistor Polarity":"NPN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Collector Current-Max (IC)":"0.6000 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"160 V","Terminal Position":"DUAL","Surface Mount":"Yes","Mfr P...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","Frequency - Transition":"-","Transistor Type":"NPN","Product Photos":"SOT-23-3","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"200mV @ 5mA, 50mA","Series":"-","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Voltage - Collector Emitter Breakdown (Max)":"160V","Power - Max":"225mW","Packaging":"Cut Tape (CT)","Datasheets":"MMBT5550L-51L, SMMBT5551L","Current - Collector Cutoff (Max)":"100nA","Supplie...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","PCN Design\/Specification":"Gold to Copper Wire 08\/May\/2007 Glue Mount Process 11\/July\/2008","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 10mA, 5V","Frequency - Transition":"-","PCN Assembly\/Origin":"Wafer Source Addition 26\/Nov\/2014","Voltage - Collector Emitter Breakdown (Max)":"160V","Datasheets":"MMBT5550L-51L, SMMBT5551L","Standard Package":"3,000","Transistor Ty...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","PCN Design\/Specification":"Gold to Copper Wire 08\/May\/2007","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 10mA, 5V","Frequency - Transition":"-","PCN Assembly\/Origin":"Wafer Source Addition 26\/Nov\/2014","Voltage - Collector Emitter Breakdown (Max)":"160V","Datasheets":"MMBT5550L-51L, SMMBT5551L","Standard Package":"1","Transistor Type":"NPN","Family":"Transistors (BJT) ...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","Online Catalog":"NPN Transistors","Transistor Type":"NPN","Frequency - Transition":"-","Product Photos":"SOT-23-3","Vce Saturation (Max) @ Ib, Ic":"200mV @ 5mA, 50mA","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"3,000","Voltage - Collector Emitter Breakdown (Max)":"160V","Supplier Device Package":"SOT-23-3 (TO-236)","Packaging":"Tape & Reel (TR)","Datasheets":"MMBT5550L-51L, SMMBT5551L","Po...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 10mA, 5V","Transistor Type":"NPN","Product Photos":"SOT-23-3","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"200mV @ 5mA, 50mA","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"10,000","Voltage - Collector Emitter Breakdown (Max)":"160V","Supplier Device Package":"SOT-23-3 (TO-236)","Packaging":"Tape & Reel (TR)","Datasheets":...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"LEAD FREE PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"80","Collector Current-Max (IC)":"0.6000 A","Collector-emitter Voltage-Max":"160 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"300 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polar...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"LEAD FREE PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"150","Collector Current-Max (IC)":"0.6000 A","Collector-emitter Voltage-Max":"160 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"300 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Pola...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"LEAD FREE PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.6000 A","Collector-emitter Voltage-Max":"160 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"300 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Pola...

"Medium Power, General Purpose, MMBT5551LT1, Silicon, NPN, 200mW, 180V, 160V, 5V, 600mA, 175°C, 100MHz, 10, 80\/250, MOT, SOT323"...