Advancedsemiconductor.com/MVAM115
{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Breakdown Voltage-Min":"18 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"15","Number of Terminals":"2","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"500 pF","Diode Cap Tolerance":"12 %","Quality Factor-Min":"150","Terminal Position":"BOTTOM","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"CYLINDRICAL","Number of Elements":"1"}...
1184 Bytes - 21:51:56, 02 May 2024
Various/MVAM115M2
{"C1\/C2 Min. Capacitance Ratio":"15.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"18","Semiconductor Material":"Silicon","Q Factor Min.":"150","P(D) Max.(W) Power Dissipation":"280m","Package":"BR-3w","@Freq. (Hz) (Test Condition)":"1.0M","Ct{Cj} Nom. (F) Junction Cap.":"500p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"1.0"}...
775 Bytes - 21:51:56, 02 May 2024