MT46V128M4TG-6TL:C
128M X 4 DDR DRAM, 0.7 ns, PDSO66

From Micron Technology, Inc.

StatusACTIVE
Access ModeFOUR BANK PAGE BURST
Access Time-Max (tRAC)0.7000 ns
Memory Density5.37E8 deg
Memory IC TypeDDR DRAM
Memory Width4
Mfr Package Description0.400 INCH, PLASTIC, TSOP-66
Number of Functions1
Number of Ports1
Number of Terminals66
Number of Words1.34E8 words
Number of Words Code128M
Operating ModeSYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization128M X 4
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Supply Voltage-Max (Vsup)2.7 V
Supply Voltage-Min (Vsup)2.3 V
Supply Voltage-Nom (Vsup)2.5 V
Surface MountYes
TechnologyCMOS
Temperature GradeCOMMERCIAL
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal Pitch0.6500 mm
Terminal PositionDUAL

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