MT47H128M16RT-25EAAT:C
128M X 16 DDR DRAM, 0.4 ns, PBGA84

From Micron Technology, Inc.

StatusACTIVE
Access ModeMULTI BANK PAGE BURST
Access Time-Max (tRAC)0.4000 ns
EU RoHS CompliantYes
Lead FreeYes
Memory Density2.15E9 deg
Memory IC TypeDDR DRAM
Memory Width16
Mfr Package Description9 X 12.5 M, ROHS COMPLIANT, FBGA-84
Number of Functions1
Number of Ports1
Number of Terminals84
Number of Words1.34E8 words
Number of Words Code128M
Operating ModeSYNCHRONOUS
Operating Temperature-Max105 Cel
Operating Temperature-Min-40 Cel
Organization128M X 16
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)1.9 V
Supply Voltage-Min (Vsup)1.7 V
Supply Voltage-Nom (Vsup)1.8 V
Surface MountYes
TechnologyCMOS
Temperature GradeINDUSTRIAL
Terminal FinishTIN SILVER COPPER
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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