1N5804US
DIODE GEN PURP 100V 1A D5A

From Microsemi Commercial Components Group

Capacitance @ Vr, F25pF @ 10V, 1MHz
CategoryDiscrete Semiconductor Products
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr1µA @ 100V
Datasheets1N5802,04,06US,URS
Diode TypeStandard
FamilyDiodes, Rectifiers - Single
Mounting TypeSurface Mount
Online CatalogStandard Diode
Operating Temperature - Junction-65°C ~ 175°C
Package / CaseSQ-MELF, A
PackagingBulk
Product Photos1N5804US
Reverse Recovery Time (trr)25ns
Series-
SpeedFast Recovery = 200mA (Io)
Standard Package1
Supplier Device PackageD-5A
Voltage - DC Reverse (Vr) (Max)100V
Voltage - Forward (Vf) (Max) @ If875mV @ 1A

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