1N5811US
DIODE GEN PURP 150V 3A B-MELF

From Microsemi Commercial Components Group

Capacitance @ Vr, F60pF @ 10V, 1MHz
CategoryDiscrete Semiconductor Products
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr5µA @ 50V
Datasheets1N5807,09,11 US/URS
Diode TypeStandard
FamilyDiodes, Rectifiers - Single
Mounting TypeSurface Mount
Online CatalogStandard Diode
Operating Temperature - Junction-65°C ~ 175°C
Package / CaseSQ-MELF, B
PackagingBulk
Product Photos1N6643US
Reverse Recovery Time (trr)30ns
Series-
SpeedFast Recovery = 200mA (Io)
Standard Package1
Supplier Device PackageB, SQ-MELF
Voltage - DC Reverse (Vr) (Max)150V
Voltage - Forward (Vf) (Max) @ If875mV @ 4A

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