2N6768TXV
14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

From Microsemi Corp.

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min400 V
Drain Current-Max (ID)14 A
Drain-source On Resistance-Max0.3000 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)25 A
Terminal FinishTIN LEAD
Terminal FormPIN/PEG
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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