GC9924-QB1-128C SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
From Microsemi Corp.
| Status | ACTIVE |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode Capacitance-Max | 0.5000 pF |
| Diode Element Material | SILICON |
| Diode Type | MIXER DIODE |
| Frequency Band | S BAND |
| Number of Elements | 4 |
| Number of Terminals | 4 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | MICROWAVE |
| Power Dissipation Limit-Max | 0.1000 W |
| Surface Mount | Yes |
| Technology | SCHOTTKY |
| Terminal Finish | TIN LEAD |
| Terminal Form | FLAT |
| Terminal Position | RADIAL |
| Type of Schottky Barrier | LOW BARRIER |
