2N2219AJAN NPN GP BJT Transistor
From MICROSEMI
Category | Bipolar Power |
Collector Current (DC) | 0.8 A |
Collector-Base Voltage | 75 V |
Collector-Emitter Voltage | 50 V |
DC Current Gain | 50 |
Emitter-Base Voltage | 6 V |
Mounting | Through Hole |
Number of Elements | 1 |
Operating Temp Range | -55C to 200C |
Operating Temperature Classification | Military |
Package Type | TO-39 |
Pin Count | 3 |
Power Dissipation | 0.8 W |
Rad Hardened | No |
Transistor Polarity | NPN |