JANS2N6790
3.5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39

From Microsemi Corp.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)3.5 A
Drain-source On Resistance-Max0.8000 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleCYLINDRICAL
Terminal FinishTIN LEAD
Terminal FormWIRE
Terminal PositionBOTTOM
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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