MGF4953A K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
From Mitsubishi Electric & Electronics USA, Inc.
Status | ACTIVE |
Case Connection | SOURCE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 2 V |
Drain Current-Max (ID) | 0.0100 A |
FET Technology | HIGH ELECTRON MOBILITY |
Highest Frequency Band | K BAND |
Mfr Package Description | LEADLESS, CERAMIC PACKAGE-4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | DEPLETION |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | SQUARE |
Package Style | CHIP CARRIER |
Power Dissipation Ambient-Max | 0.0500 W |
Power Gain-Min (Gp) | 12 dB |
Surface Mount | Yes |
Terminal Form | NO LEAD |
Terminal Position | BOTTOM |
Transistor Application | AMPLIFIER |
Transistor Element Material | GALLIUM ARSENIDE |
Transistor Type | RF SMALL SIGNAL |