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RD100HHF1
HF BAND, Si, N-CHANNEL, RF POWER, MOSFET

From Mitsubishi Electric & Electronics USA, Inc.

Status ACTIVE
Case Connection SOURCE
Channel Type N-CHANNEL
Configuration SINGLE
Drain Current-Max (ID) 25 A
DS Breakdown Voltage-Min 50 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band HIGH FREQUENCY BAND
Mfr Package Description ROHS COMPLIANT PACKAGE-2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Surface Mount Yes
Terminal Finish NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transistor Type RF POWER

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