RD100HHF1
HF BAND, Si, N-CHANNEL, RF POWER, MOSFET

From Mitsubishi Electric & Electronics USA, Inc.

StatusACTIVE
Case ConnectionSOURCE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min50 V
Drain Current-Max (ID)25 A
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Highest Frequency BandHIGH FREQUENCY BAND
Mfr Package DescriptionROHS COMPLIANT PACKAGE-2
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor TypeRF POWER

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