RM10TB-H Silicon Rectifier
From Mitsubishi Electric Semiconductor
| @I(FM) (A) (Test Condition) | 20 |
| @Temp (°C) (Test Condition) | 97 |
| @Temp. (°C) (Test Condition) | 25 |
| @V(R) (V)(Test Condition) | 800 |
| @t(w) (s) (Test Condition) | 8.3m |
| I(FSM) Max.(A) Pk.Fwd.Sur.Cur. | 350 |
| I(O) Max.(A) Output Current | 20 |
| I(RM) Max.(A) Pk. Rev. Current | 1.5m |
| Military | N |
| Package | Module-q |
| V(FM) Max.(V) Forward Voltage | 1.1 |
| V(RRM)(V) Rep.Pk.Rev. Voltage | 800 |
