3SJ11A P-Channel Enhancement MOSFET
From NEC Electronics
| @(VDS) (V) (Test Condition) | 40 |
| @I(D) (A) (Test Condition) | 1.0m |
| @V(DS) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 225m |
| C(iss) Max. (F) | 8.0p |
| I(D) Abs. Drain Current (A) | 50m |
| I(DSS) Min. (A) | 10n |
| I(GSS) Max. (A) | 10p |
| Military | N |
| Package | TO-72 |
| V(BR)DSS (V) | 30 |
| V(BR)GSS (V) | 40 |
| g(fs) Min. (S) Trans. conduct. | 500u |
| r(DS)on Max. (Ohms) | 500 |
