MII100-12A3 IGBT Single Transistor, 135 A, 2.2 V, 560 W, 1.2 kV, Module, 7
From IXYS SEMICONDUCTOR
| Collector Emitter Voltage V(br)ceo: | 1.2 kV |
| Collector Emitter Voltage Vces: | 2.2 V |
| DC Collector Current: | 135 A |
| MSL: | - |
| No. of Pins: | 7 |
| Operating Temperature Max: | 125 °C |
| Power Dissipation Pd: | 560 W |
| SVHC: | No SVHC (17-Dec-2014) |
| Transistor Case Style: | Module |
