934050550135 3.5 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
From NXP
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 30 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 55 V |
Drain Current-Max (ID) | 3.5 A |
Drain-source On Resistance-Max | 0.0800 ohm |
EU RoHS Compliant | Yes |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Lead Free | Yes |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 40 A |
Surface Mount | Yes |
Terminal Finish | NOT SPECIFIED |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |