934062051112
Trans RF MOSFET N-CH 89V 3-Pin LDMOST Blister

From NXP SEMICONDUCTORS

ApplicationUHF
Channel ModeEnhancement
Channel TypeN
Drain Efficiency (Typ)60 %
Drain Source Resistance (Max)210(Typ)@6.15V mohm
Drain Source Voltage (Max)89 V
Frequency (Max)860 MHz
Input Capacitance (Typ)@Vds95@40V pF
MountingScrew
Number of Elements1
Operating Temp Range-65C to 200C
Output Capacitance (Typ)@Vds30@40V pF
Output Power (Max)100W(Typ)
Package TypeLDMOST
PackagingBlister
Pin Count3
Power Gain (Typ)@Vds21@40V/21@40V/22@40V dB
Rad HardenedNo
Reverse Capacitance (Typ)1@40V pF
Screening LevelMilitary
VSWR (Max)10

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