934062051112 Trans RF MOSFET N-CH 89V 3-Pin LDMOST Blister
From NXP SEMICONDUCTORS
Application | UHF |
Channel Mode | Enhancement |
Channel Type | N |
Drain Efficiency (Typ) | 60 % |
Drain Source Resistance (Max) | 210(Typ)@6.15V mohm |
Drain Source Voltage (Max) | 89 V |
Frequency (Max) | 860 MHz |
Input Capacitance (Typ)@Vds | 95@40V pF |
Mounting | Screw |
Number of Elements | 1 |
Operating Temp Range | -65C to 200C |
Output Capacitance (Typ)@Vds | 30@40V pF |
Output Power (Max) | 100W(Typ) |
Package Type | LDMOST |
Packaging | Blister |
Pin Count | 3 |
Power Gain (Typ)@Vds | 21@40V/21@40V/22@40V dB |
Rad Hardened | No |
Reverse Capacitance (Typ) | 1@40V pF |
Screening Level | Military |
VSWR (Max) | 10 |