AFT18H356-24SR6
Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R

From NXP SEMICONDUCTORS

Channel ModeEnhancement
Channel TypeN
Drain Efficiency (Typ)46.7(%)
Drain Source Voltage (Max)65(V)
Frequency (Max)1995(MHz)
Frequency (Min)1805(MHz)
Mode Of Operation1-Carrier W-CDMA
MountingSurface Mount
Number of Elements2
Operating Temp Range-40C to 150C
Output Power (Max)63(TYP)
Package TypeNI-1230
PackagingTape and Reel
Pin Count7
Power Dissipation (Max)289000(mW)
Power Gain (Typ)@Vds15(dB)
Rad HardenedNo
Screening LevelAUTOMOTIVEC

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